The laboratory, a premier facility dedicated to research and development, has successfully established processes for manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) capable of handling up to 150W.
This achievement marks a crucial step forward in India's quest for technological self-reliance, the Ministry of Defence informed.
One of the standout developments includes the establishment of Monolithic Microwave Integrated Circuits (MMICs) capable of operating at power levels up to 40W within the X-band frequency range, designed to meet the advanced requirements of modern military applications.
GaN/SiC technology is recognised globally for delivering improved efficiency, compactness, and enhanced performance, making it essential for next-generation combat systems, radar technologies, electronic warfare, and even green energy solutions.
The potential of GaN/SiC technology lies in its capacity to support the demand for smaller, lighter, and more efficient power supplies in military applications.
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