The laboratory, a premier facility dedicated to research and development, has successfully established processes for manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) capable of handling up to 150W.
This achievement marks a crucial step forward in India's quest for technological self-reliance, the Ministry of Defence informed.
One of the standout developments includes the establishment of Monolithic Microwave Integrated Circuits (MMICs) capable of operating at power levels up to 40W within the X-band frequency range, designed to meet the advanced requirements of modern military applications.
GaN/SiC technology is recognised globally for delivering improved efficiency, compactness, and enhanced performance, making it essential for next-generation combat systems, radar technologies, electronic warfare, and even green energy solutions.
The potential of GaN/SiC technology lies in its capacity to support the demand for smaller, lighter, and more efficient power supplies in military applications.
This story is from the Delhi 12 November 2024 edition of Millennium Post Delhi.
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This story is from the Delhi 12 November 2024 edition of Millennium Post Delhi.
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